型号:max6439utbhzd7---t | 类别: | 制造商: |
封装: | 描述: |
详细参数
供应商
max6439utbhzd7---t相关型号
- BLF7G22LS-100P,118
其它
NXP Semiconductors
01005(0402 公制)
TRANS RF LDMOS 100W SOT1121B
- B32774D4685K
薄膜
EPCOS Inc
FILM CAP 6.8UF 10% 450V MKP
- B32561J6103K
薄膜
EPCOS Inc
FILM CAP 10NF 10% 400V
- C2012X7T2E473K/SOFT
陶瓷
TDK Corporation
0805(2012 公制)
CAP CER 0.047UF 250V X7T 0805
- C0603C180K1GACTU
陶瓷
Kemet
0603(1608 公制)
CAP CER 18PF 100V 10% NP0 0603
- BH26CL
电池座,夹,触点
MPD (Memory Protection Devices)
0603(1608 公制)
HOLDER 6 C CELL W/ SOLDER LUGS
- BLF7G22LS-200,112
RF FET
NXP Semiconductors
SOT-502B
TRANSISTOR PWR LDMOS SOT502
- C0402X5R1C331K
陶瓷
TDK Corporation
01005(0402 公制)
CAP CER 330PF 16V 10% X5R 01005
- B32774D505K
薄膜
EPCOS Inc
FILM CAP 5.0UF 10% 1100V MKP
- B32561J6153J
薄膜
EPCOS Inc
FILM CAP 15NF 5% 400V
- C2012X7T2E683K
陶瓷
TDK Corporation
0805(2012 公制)
CAP CER 0.068UF 250V X7T 0805
- C0603C180K3GACTU
陶瓷
Kemet
0603(1608 公制)
CAP CER 18PF 25V 10% NP0 0603
- BH28AAAW
电池座,夹,触点
MPD (Memory Protection Devices)
0603(1608 公制)
HOLDER 8 AAA CELL W/6" LEADS
- C0402X5R1C471K
陶瓷
TDK Corporation
01005(0402 公制)
CAP CER 470PF 16V 10% X5R 01005
- BLF7G24LS-140,112
RF FET
NXP Semiconductors
SOT-502B
TRANS LDMOS SOT502B
- B32774D505K
薄膜
EPCOS Inc
FILM CAP 5.0UF 10% 1100V MKP
- B32561J6154K289
薄膜
EPCOS Inc
FILM CAP 0.15UF 10% 400V
- C2012X7T2W103K/SOFT
陶瓷
TDK Corporation
0805(2012 公制)
CAP CER 10000PF 450V X7T 0805
- BH28NB1WHFV-TR
PMIC - 稳压器 - 线性
Rohm Semiconductor
SOT-665
IC REG LDO 2.8V .15A 5HVS0F
- C0603C180K3GACTU
陶瓷
Kemet
0603(1608 公制)
CAP CER 18PF 25V 10% NP0 0603
- C0402X5R1C681K
陶瓷
TDK Corporation
01005(0402 公制)
CAP CER 680PF 16V 10% X5R 01005
- B32774D8126K
薄膜
EPCOS Inc
径向
CAP FILM 12UF 800VDC RADIAL
- B32561J6224J
薄膜
EPCOS Inc
FILM CAP 0.22UF 5% 400V
- BH28PB1WHFV-TR
PMIC - 稳压器 - 线性
Rohm Semiconductor
SOT-665
IC REG LDO 2.8V .15A HVSOF5
- C2012X7T2W103K/SOFT
陶瓷
TDK Corporation
0805(2012 公制)
CAP CER 10000PF 450V X7T 0805
- C0402X5R1C681K
陶瓷
TDK Corporation
01005(0402 公制)
CAP CER 680PF 16V 10% X5R 01005
- BLF7G27L-200PB,112
其它
NXP Semiconductors
TRANS RF LDMOS 200W SOT1110A
- C0603C180K5GALTU
陶瓷
Kemet
0603(1608 公制)
CAP CER 18PF 50V 10% NP0 0603
- B32561J6333J189
薄膜
EPCOS Inc
FILM CAP 33NF 5% 400V
- B32774D8305J
薄膜
EPCOS Inc
FILM CAP 3.0UF 5% 800V MKP
- BH29MA3WHFV-TR
PMIC - 稳压器 - 线性
Rohm Semiconductor
6-HVSOF
IC REG LDO 2.9V .3A 6HVS0F
- C2012X7T2W103M/SOFT
陶瓷
TDK Corporation
0805(2012 公制)
CAP CER 10000PF 450V X7T 0805
- C0402X7R1A101K
陶瓷
TDK Corporation
01005(0402 公制)
CAP CER 100PF 10V 10% X7R 01005
- BLF7G27L-200PB,118
其它
NXP Semiconductors
TRANS RF LDMOS 200W SOT1110A
- B32776E206K
薄膜
EPCOS Inc
FILM CAP 20UF 10% 1100V MKP
- BF959
RF 晶体管 (BJT)
ON Semiconductor
TO-226-3、TO-92-3 标准主体
TRANS RF NPN 20V 100MA TO-92
- C0603C181F1GACTU
陶瓷
Kemet
0603(1608 公制)
CAP CER 180PF 100V 1% NP0 0603
- B32561J6333K289
薄膜
EPCOS Inc
FILM CAP 33NF 10% 400V
- C2012X7T2W103M/SOFT
陶瓷
TDK Corporation
0805(2012 公制)
CAP CER 10000PF 450V X7T 0805
- BH29MA3WHFV-TR
PMIC - 稳压器 - 线性
Rohm Semiconductor
6-HVSOF
IC REG LDO 2.9V .3A 6HVS0F